Telecommunication wavelength GaAsBi light emitting diodes

Light-emitting silicon pn diodes

We report on the electrical and optical characteristics of silicon light-emitting pn diodes. The diodes are prepared by ion implantation of boron at high doses and subsequent hightemperature annealing. Under forward bias, the diodes emit infrared electroluminescence closely below the band gap of bulk Si. We present a rate-equation model for bound excitons, free excitons and free carriers which ...

ZnO - Based Light - Emitting Diodes

GaN microdisk light emitting diodes

Articles you may be interested in Suppression of electron overflow and efficiency droop in N-polar GaN green light emitting diodes Appl. High-density plasma-induced etch damage of InGaN/GaN multiple quantum well light-emitting diodes

Light emitting diodes reliability review

0026-2714/$ see front matter 2011 Elsevier Ltd. A doi:10.1016/j.microrel.2011.07.063 ⇑ Corresponding author at: CALCE Center for Adva University of Maryland, College Park, MD 20742, Un 5323; fax: +1 301 314 9269. E-mail address: [email protected] (M. Pecht). The increasing demand for light emitting diodes (LEDs) has been driven by a number of application categories, including display backligh...

Flexible vertical light emitting diodes.

Recently developed concepts in materials, manufacturing approaches and mechanics strategies open up opportunities for building optoelectronic systems with high performance, inorganic semiconductors in systems that afford exceptional levels of mechanical deformability (e.g., ability to bend and stretch), diversity in geometric layouts (e.g., large-area coverage, in dense or sparse coverages), an...